IRFU410A データシート PDFこの部品の機能は「Advanced Power Mosfet」です。 |
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部品番号 |
IRFU410A Advanced Power MOSFET Advanced Power MOSFET IRFU410A IRFU410A BVDSS = 520 V RDS(on) = 10.0 Ω ID = 1.2 A TO-220 Improved Inductive Ruggedness Rugged Polysilicon Gate Cell Structure Fast Switching Times Lower Input Capac Fairchild |
文字列「 IRFU410 」「 410A 」で始まる検索結果です。 |
部品説明 |
IRFU410 1.5A / 500V / 7.000 Ohm / N-Channel Power MOSFETs IRFR410, IRFU410 Data Sheet July 1999 File Number 3372.2 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified l Intersil |
IRFU410 N-Channel Power MOSFETs IRFR410, IRFU410 Data Sheet July 1999 File Number 3372.2 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to wit Intersil Corporation |
IRFU4104 Power MOSFET(Vdss=40V / Rds(on)=5.5mohm / Id=42A) PD - 94728 AUTOMOTIVE MOSFET IRFR4104 IRFU4104 HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 40V G S RDS(on) = 5.5mΩ ID = International |
IRFU4104 Power MOSFET ( Transistor ) PD - 94728 AUTOMOTIVE MOSFET IRFR4104 IRFU4104 HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 40V G S R International Rectifier |
IRFU4104PbF Power MOSFET ( Transistor ) PD - 95425B IRFR4104PbF IRFU4104PbF HEXFET® Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V RDS(on) = 5.5mΩ G S ID = 42A Des International Rectifier |
IRFU4105 Power MOSFET(Vdss=55V / Rds(on)=0.045ohm / Id=27A) PD - 91302C IRFR/U4105 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount (IRFR4105) Straight Lead (IRFU4105) Fast Switching Fully Avalanche Rated D VDSS = 55V G S RDS(on) = 0.045Ω ID = 27A Description Fifth Generation HEXFETs from International Recti International |
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