IRFSL11N50APBF データシート PDFこの部品の機能は「Hexfet Power Mosfet」です。 |
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部品番号 |
IRFSL11N50APBF HEXFET Power MOSFET PD- 95231 IRFSL11N50APbF • Lead-Free www.Datasheet.jp www.irf.com 1 04/29/04 IRFSL11N50APbF 2 www.irf.com IRFSL11N50APbF www.irf.com 3 IRFSL11N50APbF 4 www.irf.com IRFSL11N50APbF International Rectifier |
文字列「 IRFSL11N50 」「 11N50APBF 」で始まる検索結果です。 |
部品説明 |
IRFSL11N50A HEXFET Power MOSFET PD- 91847A IRFSL11N50A HEXFET® Power MOSFET l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Requirements D VDSS = 500V G S RDS(on) = 0.55Ω ID = 11A Description Third Generation HEXFETs from International Rectifier IRF |
IRFSL11N50A Power MOSFET ( Transistor ) IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 500 VGS = 10 V 51 Qgs (nC) 12 Qgd (nC) 23 Configuration Single I2PAK (TO-262) D 0.55 G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-fr Vishay |
1150MP 150W / 50V / Class C Avionics 1025 - 1150 Mhz 1150MP 150 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1150MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transis Advanced Power Technology |
1150PT Phase Control Thyristors SEMICONDUCTOR RRooHHSS SEMICONDUCTOR 1150PT Series RRooHHSS www.nellsemi.com Page 2 of 2 nELL |
2SA1150 TRANSISTOR (LOW FREQUENCY AMPLIFIER APPLICATIONS) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 2SA1150 Low Frequency Amplifier Applications Unit: mm • High hFE: hFE = 100~320 • Complementary to 2SC2710. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base vo Toshiba Semiconductor |
2SB1150 PNP SILICON DARLINGTON TRANSISTOR NEC |
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