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IRFS640A データシート PDF 検索

番号 部品番号 部品説明 メーカ PDF
3 IRFS640A

N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFS640A FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Lower Leakage Current : 10 A (Max.) @ VDS = 200V DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applic

Inchange Semiconductor
Inchange Semiconductor
IRFS640A データシート pdf
2 IRFS640A

Advanced Power MOSFET

www.Datasheet.jp Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 Ω (Typ. ) 1 IRFS640A BVDSS = 200 V RDS(on) = 0.18 Ω ID = 9.8 A TO-220F 2 3 1.Gate 2. Drain 3. Source Absolute Maxim

Fairchild Semiconductor
Fairchild Semiconductor
IRFS640A データシート pdf
1 IRFS640A

Advanced Power MOSFET

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Samsung Electronics
Samsung Electronics
IRFS640A データシート pdf


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