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Datasheet IRFPS37N50A Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1IRFPS37N50AHEXFET Power MOSFET

PD- 91822C SMPS MOSFET IRFPS37N50A HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Chara
International Rectifier
International Rectifier
mosfet
2IRFPS37N50APower MOSFET, Transistor

IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 180 46 71 Single D FEATURES 500 0.13 • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV
Vishay
Vishay
mosfet
3IRFPS37N50APBFPower MOSFET, Transistor

PD- 95142 IRFPS37N50APbF SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized
International Rectifier
International Rectifier
mosfet
4IRFPS37N50APBFPower MOSFET, Transistor

IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 180 46 71 Single D FEATURES 500 0.13 • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV
Vishay
Vishay
mosfet


IRF Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1IRF-182xxInductors

w w ELECTRICAL SPECIFICATIONS MATERIAL SPECIFICATIONS Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite. a D . w ta Sh t e e 4U .c om Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES IRF Vishay Dale • Flame-retardant coating and color band identification.
Vishay Intertechnology
Vishay Intertechnology
inductor
2IRF-46Inductors Epoxy Conformal Coated

IRF-46 Vishay Dale Inductors Epoxy Conformal Coated, Axial Leaded FEATURES • Axial lead type, small lightweight design • Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS • Treated with epoxy resin coating for humidity COMPLIANT resi
Vishay Siliconix
Vishay Siliconix
inductor
3IRF034N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF034 DESCRIPTION ·Drain Current ID=25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.05Ω(Max) ·Simple Drive Requirements APPLICATIONS ·Switching power supp
Inchange Semiconductor
Inchange Semiconductor
mosfet
4IRF034REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

PD - 90585 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF034   IRF034 60V, N-CHANNEL BVDSS RDS(on) 60V 0.050Ω ID 25Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transi
International Rectifier
International Rectifier
transistor
5IRF044N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF044 DESCRIPTION ·Drain Current ID=44A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.028Ω(Max) ·Simple Drive Requirements APPLICATIONS ·Switching power sup
Inchange Semiconductor
Inchange Semiconductor
mosfet
6IRF044N-CHANNEL POWER MOSFET

IRF044 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES • HERMETICALLY SEALED TO–3 METAL PACKAGE 7.87 (0.310) 6.99 (0.275) 1 20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.07
Seme LAB
Seme LAB
mosfet
7IRF044REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE

PD - 90584 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF044 BVDSS 60V RDS(on) 0.028 Ω ID 44Α  IRF044 60V, N-CHANNEL The HEXFET technology is the key to International Rectifier’s advanced line of
International Rectifier
International Rectifier
transistor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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