IRFP450N データシート PDFこの部品の機能は「Power Mosfet ( Transistor )」です。 |
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部品番号 |
IRFP450N Power MOSFET ( Transistor ) PD- 94216 SMPS MOSFET IRFP450N HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l VDSS 500V Rds(on) max 0.37Ω ID 1 International Rectifier |
IRFP450N Power MOSFET ( Transistor ) IRFP450N, SiHFP450N Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 77 26 34 Single D FEATURES 500 0.37 • Low G Vishay Siliconix |
文字列「 IRFP450 」「 450N 」で始まる検索結果です。 |
部品説明 |
IRFP450 N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP450 FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·Fast Switching DESCRIPTION ·Designed f Inchange Semiconductor |
IRFP450 Diode ( Rectifier ) American Microsemiconductor |
IRFP450 Power MOSFET ( Transistor ) International Rectifier |
IRFP450 N-Channel Power MOSFET / Transistor IRFP450 Data Sheet July 1999 File Number 2331.3 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the Intersil Corporation |
IRFP450 N-Channel Power MOSFET / Transistor ® IRFP450 N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH™ MOSFET TYPE V DSS RDS(on) ID IRFP450 500 V < 0.4 Ω 14 A s TYPICAL RDS(on) = 0.33 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DE ST Microelectronics |
IRFP450 N-CHANNEL POWER MOSFETS Samsung semiconductor |
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