IRFP150N PDF Datasheet

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP150N Features ·Drain Current –ID= 42A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.036Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies a

IRFP150N Data Sheet January 2002 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width C

l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFE

• Lead-Free PD - 95002 IRFP150NPbF www.irf.com 1 2/11/04 IRFP150NPbF 2 www.irf.com IRFP150NPbF www.irf.com 3 IRFP150NPbF 4 www.irf.com IRFP150NPbF www.irf.com 5 IRFP150NPbF 6 www.irf.com IRFP150NPbF www.irf.com 7 IRFP150NPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) 15.90 (.626) 15.30 (.602) -B- 20.30 (.800) 19.70 (.775) 123 14.80