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Datasheet IRFM350 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 IRFM350   N-CHANNEL POWER MOSFET

IRFM350 MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES • N–CHANNEL MOSFET • HIGH VOLTAGE • INTEGRAL PROTECTION DIODE • HERMETI
 Seme LAB
Seme LAB		 datasheet IRFM350 pdf

IRFM Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IRFML8244TRPBF

HEXFET Power MOSFET

PD - 97587A IRFML8244TRPbF VDS VGS Max RDS(on) max (@VGS = 10V) 25 ± 20 24 41 V V m m 6  *  HEXFET® Power MOSFET  ' Micro3TM (SOT-23) IRFML8244TRPbF RDS(on) max (@VGS = 4.5V) Application(s) Load/ System Switch Features and Benefits Features Low RDS(on) (
International Rectifier
International Rectifier		 datasheet pdf - International Rectifier
IRFM450

Power MOSFET ( Transistor )

PD - 90493F POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number IRFM450 IRFM450 JANTX2N7228 JANTXV2N7228 REF: MIL-PRF-19500/592 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY ® RDS(on) 0.415 Ω ID 12A HEXFET® MOSFET technology is the key to International Rectifier’s
 IRF
IRF		 datasheet pdf - IRF
IRFML8244TRPBF

HEXFET Power MOSFET

Product specification IRFML8244TRPbF VDS VGS Max RDS(on) max (@VGS = 10V) 25 ± 20 24 41 V V m m 6  *  HEXFET® Power MOSFET  ' Micro3TM (SOT-23) IRFML8244TRPbF RDS(on) max (@VGS = 4.5V) Application(s) Load/ System Switch Features and Benefits Features Low
TY Semiconductor
TY Semiconductor		 datasheet pdf - TY Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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