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Datasheet IRFM210A Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | IRFM210A | Advanced Power MOSFET
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 1.169 Ω (Typ.)
IRFM210A
BVDSS = 200 V RDS(on) = 1 |
Fairchild Semiconductor |
IRFM2 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
IRFM250 | N-CHANNEL POWER MOSFET |
Seme LAB |
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IRFM240 | POWER MOSFET THRU-HOLE (TO-254AA) |
International Rectifier |
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IRFM224B | 250V N-Channel MOSFET |
Fairchild Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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