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Datasheet IRFIZ24N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRFIZ24N | Power MOSFET(Vdss=55V/ Rds(on)=0.07ohm/ Id=14A) PD - 9.1501A
IRFIZ24N
HEXFET® Power MOSFET
Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description
l l
D
VDSS = 55V
G S
RDS(on) = 0.07Ω ID = 14A
Fifth Generation HEXFETs from International R |
 International Rectifier |
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| 1 | IRFIZ24NPBF | Power MOSFET ( Transistor ) Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silic |
International Rectifier |
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