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Datasheet IRFI630 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
6 | IRFI630 | 200V N-Channel MOSFET IRFW630B / IRFI630B
IRFW630B / IRFI630B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resista |
Fairchild Semiconductor |
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5 | IRFI630 | Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=5.9A) |
International Rectifier |
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4 | IRFI630A | Power MOSFET ( Transistor )
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Samsung |
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3 | IRFI630B | 200V N-Channel MOSFET IRFW630B / IRFI630B
IRFW630B / IRFI630B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resista |
Fairchild Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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