|
|
Datasheet IRFI530N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRFI530N | HEXFET Power MOSFET PD - 9.1353A
PRELIMINARY
IRFI530N
D
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
VDSS = 100V
G S
RDS(on) = 0.11Ω ID = 12A
Description
Fifth Generation HEXFETs from I |
 International Rectifier |
 |
| 1 | IRFI530NPBF | Power MOSFET ( Transistor ) HEXFET® Power MOSFET
l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve |
International Rectifier |
|
| Esta página es del resultado de búsqueda del IRFI530N. Si pulsa el resultado de búsqueda de IRFI530N se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |