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Datasheet IRFI520N Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | IRFI520N | Power MOSFET(Vdss=100V/ Rds(on)=0.20ohm/ Id=7.6A) PD - 9.1362A
PRELIMINARY
IRFI520N
D
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
VDSS = 100V
G S
RDS(on) = 0.20Ω ID = 7.6A
Description
Fifth Generation HEXFETs from |
International Rectifier |
IRFI5 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
IRFI540N | Power MOSFET(Vdss=100V/ Rds(on)=0.052ohm/ Id=20A) |
International Rectifier |
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IRFI530N | HEXFET Power MOSFET |
International Rectifier |
|
IRFI510 | Advanced Power MOSFET |
Fairchild Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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