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Datasheet IRFI1310G Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | IRFI1310G | Power MOSFET(Vdss=100V/ Rds(on)=0.04ohm/ Id=22A) Previous Datasheet
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PD - 9.1222
IRFI1310G
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Repetitive Avalanche Rated 175°C Operating Temperature Description
Four |
International Rectifier |
IRFI13 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
IRFI1310N | Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=24A) |
International Rectifier |
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IRFI1310NPBF | Power MOSFET ( Transistor ) |
International Rectifier |
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IRFI1310NPBF | Power MOSFET ( Transistor ) |
Infineon |
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