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Datasheet IRFF130 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | IRFF130 | 8.0A/ 100V/ 0.180 Ohm/ N-Channel Power MOSFET IRFF130
Data Sheet March 1999 File Number 1564.3
8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanch |
Intersil Corporation |
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2 | IRFF130 | Trans MOSFET N-CH 100V 8A 3-Pin TO-39 |
New Jersey Semiconductor |
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1 | IRFF130 | HEXFET TRANSISTORS PD - 90430C
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
THRU-HOLE (TO-205AF)
Product Summary
Part Number BVDSS
IRFF130
100V
RDS(on) 0.18Ω
ID 8.0A
IRFF130 JANTX2N6796 JANTXV2N6796 REF:MIL-PRF-19500/557 100V, N-CHANNEL
The HEXFETtechnology is the key to International
Rectif |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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