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Datasheet IRFF120 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRFF120 | 6.0A/ 100V/ 0.300 Ohm/ N-Channel Power MOSFET IRFF120
Data Sheet March 1999 File Number 1563.3
6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanch |
 Intersil Corporation |
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| 3 | IRFF120 | HEXFET TRANSISTORS PD-90426D
IRFF120
JANTX2N6788
REPETITIVE AVALANCHE AND dv/dt RATED
JANTXV2N6788
HEXFET®TRANSISTORS
REF:MIL-PRF-19500/555
THRU-HOLE (TO-205AF)
100V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on)
IRFF120
100V 0.30Ω
ID 6.0A
The HEXFET®technology is the key to International
Recti |
 International Rectifier |
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| 2 | IRFF120 | (IRFF120 - IRFF123) N-Channel Enhancement-Mode Power MOS Field-Effect Transistors |
 GE Solid State |
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| 1 | IRFF120 | Trans MOSFET N-CH 100V 6A 3-Pin TO-39 |
 New Jersey Semiconductor |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
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