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Datasheet IRFD9110 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | IRFD9110 | 0.7A/ 100V/ 1.200 Ohm/ P-Channel Power MOSFET IRFD9110
Data Sheet July 1999 File Number
2215.3
0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET
This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanch |
Intersil Corporation |
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3 | IRFD9110 | Power MOSFET(Vdss=-100V/ Rds(on)=1.2ohm/ Id=-0.70A) |
International Rectifier |
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2 | IRFD9110 | 0.7A/ 100V/ 1.200 Ohm/ P-Channel Power MOSFET IRFD9110
Data Sheet January 2002
0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET
This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operat |
Fairchild Semiconductor |
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1 | IRFD9110PbF | Power MOSFET ( Transistor ) Lead-Free
PD- 95921
IRFD9110PbF
www.irf.com
1 10/28/04
IRFD9110PbF
2 www.irf.com
IRFD9110PbF
www.irf.com
3
IRFD9110PbF
4 www.irf.com
IRFD9110PbF
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5
IRFD9110PbF
6 www.irf.com
IRFD9110PbF
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations • Low Stray In |
International Rectifier |
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Sanken |
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