Datasheet IRFD420 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRFD420	Power MOSFET(Vdss=500V/ Rds(on)=3.0ohm/ Id=0.37A) Previous Datasheet Index Next Data Sheet PD -9.1227 IRFD420 HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier p	International Rectifier

IRFD Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRFD110	Power MOSFET(Vdss=100V/ Rds(on)=0.54ohm/ Id=1.0A)	International Rectifier
IRFD110	1A/ 100V/ 0.600 Ohm/ N-Channel Power MOSFET IRFD110 Data Sheet July 1999 File Number 2314.3 1A, 100V, 0.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the b	Intersil Corporation
IRFD120	1.3A/ 100V/ 0.300 Ohm/ N-Channel Power MOSFET IRFD120 Data Sheet July 1999 File Number 2315.3 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mo	Intersil Corporation

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Número de pieza	Descripción	Fabricantes	PDF
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