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Datasheet IRFBF20 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
6 | IRFBF20 | Power MOSFET(Vdss=900V/ Rds(on)=8.0ohm/ Id=1.7A) |
International Rectifier |
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5 | IRFBF20 | Power MOSFET ( Transistor ) Power MOSFET
IRFBF20, SiHFBF20
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
900 VGS = 10 V
38 4.7 21 Single
D
8.0
TO-220AB
G
S D G
S N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES • Dynamic dV/dt Rati |
Vishay |
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4 | IRFBF20L | Power MOSFET(Vdss=900V/ Rds(on)=8.0ohm/ Id=1.7A) PD - 9.1665
PRELIMINARY
l l l l l l l
IRFBF20S/L
HEXFET® Power MOSFET
D
Surface Mount (IRFBF20S) Low-profile through-hole (IRFBF20L) Available in Tape & Reel (IRFBF20S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated
VDSS = 900V RDS(on) = 8.0Ω
G
ID = 1 |
International Rectifier |
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3 | IRFBF20L | Power MOSFET ( Transistor ) IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
900 VGS = 10 V
38
Qgs (nC)
4.7
Qgd (nC)
21
Configuration
Single
8.0 D
I2PAK (TO-262) D2PAK (TO-263)
G D S
G
S N-Channel MOSFET
FEATURES • Halogen-free According |
Vishay |
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Número de pieza | Descripción | Fabricantes | |
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