IRFBC40LC データシート PDFこの部品の機能は「Power Mosfet ( Transistor )」です。 |
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部品番号 |
IRFBC40LC Power MOSFET ( Transistor ) www.Datasheet.jp International Rectifier |
文字列「 IRFBC40 」「 40LC 」で始まる検索結果です。 |
部品説明 |
IRFBC40 N - CHANNEL 600V - 1.0ohm - 6.2 A - TO-220 PowerMESH] MOSFET ® IRFBC40 N - CHANNEL 600V - 1.0 Ω - 6.2 A - TO-220 PowerMESH™ MOSFET TYPE IRFBC40 s s s s s V DSS 600 V R DS(on) < 1.2 Ω ID 6.2 A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 2 STMicroelectronics |
IRFBC40 6.2A/ 600V/ 1.200 Ohm/ N-Channel Power MOSFET IRFBC40 Data Sheet July 1999 File Number 2157.3 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the Intersil Corporation |
IRFBC40 6.2A and 5.4A/ 600V/ 1.2 and 1.6 Ohm/ N-Channel Power MOSFETs Semiconductor IRFBC40, IRFBC42 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified Harris Corporation |
IRFBC40 Power MOSFET(Vdss=600V/ Rds(on)max=1.2ohm/ Id=6.2A) International Rectifier |
IRFBC40 N-Channel Power MOSFET / Transistor IRFBC40 Data Sheet January 2002 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avala Fairchild Semiconductor |
IRFBC40 Power MOSFET ( Transistor ) IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 60 8.3 30 Single D FEATURES 600 1.2 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling Vishay |
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