Datasheet IRFB9N60A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRFB9N60A	Power MOSFET(Vdss=600V/ Rds(on)=0.75ohm/ Id=9.2A) PD - 91811 IRFB9N60A HEXFET® Power MOSFET l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Requirements D VDSS = 600V G S RDS(on) = 0.75Ω ID = 9.2A Description Third Generation HEXFETs from International Rectifier provide the designer	International Rectifier

IRFB9N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRFB9N65A	Power MOSFET(Vdss=650V/ Rds(on)max=0.93ohm/ Id=8.5A) PD - 91815C SMPS MOSFET IRFB9N65A HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Rugge	International Rectifier
IRFB9N60A	Power MOSFET(Vdss=600V/ Rds(on)=0.75ohm/ Id=9.2A) PD - 91811 IRFB9N60A HEXFET® Power MOSFET l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Requirements D VDSS = 600V G S RDS(on) = 0.75Ω ID = 9.2A Description Third Generation HEXFETs from International Rectifier p	International Rectifier
IRFB9N65	Power MOSFET(Vdss=650V/ Rds(on)max=0.93ohm/ Id=8.5A) PD - 91815C SMPS MOSFET IRFB9N65A HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Rugge	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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