Datasheet IRFB9N30APBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRFB9N30APBF	Power MOSFET ( Transistor ) l Dynamic dv/dt Rating l Repetitive Avalanche Rated l Fast Switching l Ease of Paraleing l Dynamic dv/dt Rated l Simple Drive Requirements l Lead-Free PD- 95350 IRFB9N30APbF HEXFET® Power MOSFET D VDSS = 300V RDS(on) = 0.45Ω G ID = 9.3A S Description Third Generation HEXFETs from International	International Rectifier

IRFB9N30A Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRFB9N30APBF	Power MOSFET ( Transistor ) l Dynamic dv/dt Rating l Repetitive Avalanche Rated l Fast Switching l Ease of Paraleing l Dynamic dv/dt Rated l Simple Drive Requirements l Lead-Free PD- 95350 IRFB9N30APbF HEXFET® Power MOSFET D VDSS = 300V RDS(on) = 0.45Ω G ID = 9.3A S Description Third Generation HEXFETs	International Rectifier
IRFB9N30A	Power MOSFET(Vdss=300V/ Rds(on)=0.45ohm/ Id=9.3A) PD- 91832 IRFB9N30A HEXFET® Power MOSFET l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Requirements D VDSS = 300V G S RDS(on) = 0.45Ω ID = 9.3A Description Third Generation HEXFETs from International Rectifier pr	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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