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Datasheet IRF9953 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRF9953 | Power MOSFET(Vdss=-30V/ Rds(on)=0.25ohm) PD - 9.1560A
PRELIMINARY
l l l l l l
IRF9953
HEXFET® Power MOSFET
8 7
Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated
S1 G1 S2 G2
1
D1 D1 D2 D2
2
VDSS = -30V RDS(on) = 0.25Ω
3 4
6
5
Des |
 International Rectifier |
 |
| 1 | IRF9953PBF | Power MOSFET ( Transistor )
PD - 95477
IRF9953PbF
Generation V Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully Avalanche Rated l Lead-Free Description
l
HEXFET® Power MOSFET
S1 G1 S2 G2
1 2 3 4 8 7
D1 D1 D2 D2
VDSS = -30V |
International Rectifier |
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