Datasheet IRF9530SMD Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRF9530SMD	P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS IRF9530SMD MECHANICAL DATA Dimensions in mm (inches) 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .6 0 (0 .1 4 2 ) M a x . 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDSS ID(cont) RDS(on) F	Seme LAB

IRF9530 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRF9530	P-CHANNEL POWER MOSFETS	Samsung semiconductor
IRF9530	Power MOSFET ( Transistor ) Power MOSFET IRF9530, SiHF9530 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 100 VGS = - 10 V 38 6.8 21 Single 0.30 TO-220AB S G S D G D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURE	Vishay
IRF9530N	Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A) PD - 91482C IRF9530N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.20Ω G ID = -14A S Description Fifth Generation HEXFETs from Inte	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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