IRF9530NSTRR データシート PDFこの部品の機能は「Power Mosfet(vdss=-100v/ Rds(on)=0.20ohm/ Id=-14a)」です。 |
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部品番号 |
IRF9530NSTRR Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A) PD - 91523A IRF9530NS/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9530NS) l Low-profile through-hole (IRF9530NL) l 175°C Operating Temperature l Fast Switching l P-Channel International Rectifier |
文字列「 IRF9530 」「 9530NSTRR 」で始まる検索結果です。 |
部品説明 |
IRF9530 P-CHANNEL POWER MOSFETS Samsung semiconductor |
IRF9530 12A/ 100V/ 0.300 Ohm/ P-Channel Power MOSFETs IRF9530, RF1S9530SM Data Sheet July 1999 File Number 2221.4 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified Intersil Corporation |
IRF9530 TRANSISTORS International Rectifier |
IRF9530 P-Channel Power MOSFETs Data Sheet IRF9530, RF1S9530SM January 2002 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energ Fairchild Semiconductor |
IRF9530 Power MOSFET ( Transistor ) Power MOSFET IRF9530, SiHF9530 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 100 VGS = - 10 V 38 6.8 21 Single 0.30 TO-220AB S G S D G D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURE Vishay |
IRF9530-220M P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS IRF9530-220M MECHANICAL DATA Dimensions in mm (inches) 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 10.41 10.67 P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDSS ID(cont) RDS(on) FEATURES 0.89 1.14 16.38 16.89 13.39 13.64 1 2 3 12.70 19.05 -100V -9.3A 0.31W 10.41 10.92 2.54 Seme LAB |
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