IRF840B データシート PDFこの部品の機能は「500v N-channel Mosfet」です。 |
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部品番号 |
IRF840B D Series Power MOSFET www.vishay.com IRF840B Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg (max.) (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 30 4 7 Vishay |
IRF840B 500V N-Channel MOSFET IRF840B/IRFS840B February 2005 IRF840B/IRFS840B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietar Fairchild Semiconductor |
文字列「 IRF840 」「 840B 」で始まる検索結果です。 |
部品説明 |
IRF840 500V, 8A, N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola Inc |
IRF840 8A, 500V, N-Channel MOSFET, Transistor Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • High thermal cycling performance • Low thermal resistance g IRF840 SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 8.5 A R NXP Semiconductors |
IRF840 N - CHANNEL 500V - 0.75ohm - 8A - TO-220 PowerMESH] MOSFET ® IRF840 N - CHANNEL 500V - 0.75Ω - 8A - TO-220 PowerMESH™ MOSFET TYPE IRF840 s s s s s V DSS 500 V R DS(on) < 0.85 Ω ID 8 A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 2 3 DE STMicroelectronics |
IRF840 500V, 8A, N-CHANNEL POWER MOSFET Samsung semiconductor |
IRF840 8A/ 500V/ 0.850 Ohm/ N-Channel Power MOSFET IRF840 Data Sheet July 1999 File Number 2312.3 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the br Intersil Corporation |
IRF840 TRANSISTORS N-CHANNEL, 8A, 500V International Rectifier |
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