| No | Part number | Description ( Function ) | Manufacturers | |
| 2 | IRF7555 | Power MOSFET(Vdss=-20V/ Rds(on)=0.055ohm) PD -91865B IRF7555 HEXFET® Power MOSFET Trench Technology q Ultra Low On-Resistance q Dual P-Channel MOSFET q Very Small SOIC Package q Low Profile (<1.1mm) q Available in Tape & Reel q S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = -20V RDS(on) = 0.055Ω 3 6 4 5 T o p V ie w Description New trench HEXFET® power MOSFETs from International Rectifier utilize advanced pr |
 International Rectifier |
|
| 1 | IRF7555PBF | Power MOSFET ( Transistor ) PD -95993 IRF7555PbF l Trench Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Lead-Free S1 G1 S2 G2 Description New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, |
International Rectifier |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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