| No | Part number | Description ( Function ) | Manufacturers | |
| 16 | IRF750 | Advanced Power MOSFET $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 0.254Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-So |
 Fairchild Semiconductor |
|
| 15 | IRF7501 | Power MOSFET(Vdss=20V/ Rds(on)=0.135ohm) PD - 91265H PRELIMINARY l l l l l l l IRF7501 HEXFET® Power MOSFET 8 7 Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching S1 G1 S2 G2 1 D1 D1 D2 D2 2 VDSS =20V RDS(on) = 0.135Ω 3 6 4 5 T o p V ie w Description Fifth Generation HEXFETs from International Recti |
 International Rectifier |
|
| 14 | IRF7501PBF | Power MOSFET ( Transistor ) PD - 95345A IRF7501PbF HEXFET® Power MOSFET l l l l l l l l Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Lead-Free S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS =20V RDS(on) = 0.135Ω 6 5 Top View Description Fifth Generation HEXFETs from International Rectifier |
International Rectifier |
|
| 13 | IRF7503 | Power MOSFET(Vdss=30V/ Rds(on)=0.135ohm) PD - 9.1266G IRF7503 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 VDSS = 30V RDS(on) = 0.135Ω 3 6 4 5 Description Fifth Generation HEXFETs from International Rectifier utilize advanced pr |
International Rectifier |
|
| 12 | IRF7503PBF | Power MOSFET ( Transistor ) Lead-Free PD- 95346 IRF7503PbF www.irf.com 1 02/22/05 IRF7503PbF 2 www.irf.com IRF7503PbF www.irf.com 3 IRF7503PbF 4 www.irf.com IRF7503PbF www.irf.com 5 IRF7503PbF 6 www.irf.com IRF7503PbF Micro8 Package Outline Dimensions are shown in milimeters (inches) D -B- 3 3 E -A- 8765 1234 H 0.25 (.010) M AM LEAD ASSIGNMENTS DDDD D1 D1 D2 D2 8765 SINGLE 1234 |
International Rectifier |
|
| 11 | IRF7504 | Power MOSFET(Vdss=-20V/ Rds(on)=0.27ohm) PD - 9.1267G IRF7504 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 VDSS = -20V RDS(on) = 0.27Ω 3 6 4 5 Description Fifth Generation HEXFETs from International Rectifier utilize advanced pr |
International Rectifier |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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