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Datasheet IRF7343 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRF7343 | HEXFET Power MOSFET PD -91709
IRF7343
HEXFET® Power MOSFET
l l l l l
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated
S1 G1 S2 G2
N - C H A N N EL M O S FE T 1 8 2 7
D1 D1 D2 D2
N-Ch VDSS 55V
P-Ch -55V
3 4
6
5
P -C H A N N E L M O S F E T
Descr |
 International Rectifier |
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| 2 | IRF7343PBF | HEXFET Power MOSFET PD - 92547
IRF7343PbF
l l l l l l
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET
S1 G1 S2 G2
N-CHANNEL MOSFET 1 8 2 3 4 7
D1 D1 D2 D2
N-Ch VDSS 55V
P-Ch -55V
6 5
Description
Fifth Generation HEXF |
International Rectifier |
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| 1 | IRF7343QPbF | Power MOSFET ( Transistor ) PD - 96110A
l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free
Description
These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achie |
International Rectifier |
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