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Datasheet IRF720 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 22 | IRF720 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements
isc Product Specification
IRF720
·DESCRITION ·Designed especially for high voltage,high speed applications,
such as off-l |
 Inchange Semiconductor |
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| 21 | IRF720 | N-CHANNEL POWER MOSFETS |
 Samsung semiconductor |
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| 20 | IRF720 | 3.3A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET IRF720
Data Sheet July 1999 File Number
1579.4
3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche |
 Intersil Corporation |
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| 19 | IRF720 | TRANSISTORS N-CHANNEL |
 International Rectifier |
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