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Datasheet IRF646 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRF646 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF646
·FEATURES ·14A, 275V ·RDS(ON) = 0.280Ω ·Single Pulse Avalanche Energy Rated ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·High Input Impedance ·275V DC Rating-120V AC Line System Oper |
 Inchange Semiconductor |
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| 1 | IRF646 | 14A/ 275V/ 0.280 Ohm/ N-Channel Power MOSFET IRF646
Data Sheet June 1999 File Number
2169.3
14A, 275V, 0.280 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche m |
 Intersil Corporation |
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