IRF640PBF データシート PDFこの部品の機能は「N-channel Type Power Mosfet」です。 |
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部品番号 |
IRF640PBF Power MOSFET ( Transistor ) IRF640, SiHF640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 70 13 39 Single D FEATURES 200 0.18 • Dynamic dV/dt Ra Vishay |
IRF640PBF N-Channel Type Power MOSFET IRF640PBF ® IRF640PBF Pb Free Plating Product Pb 18A,200V Heatsink N-Channel Type Power MOSFET Features ̰ RDS(on) (Max 0.18 ˟ )@VGS=10V ̰ Gate Charge (Typical 44nC) ̰ Improved dv/dt Capabili Thinki Semiconductor |
文字列「 IRF640 」「 640PBF 」で始まる検索結果です。 |
部品説明 |
IRF640 N-channel TrenchMOS transistor Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF640, IRF640S FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 16 A g RDS(ON) ≤ NXP Semiconductors |
IRF640 N-CHANNEL 200V, 18A, MOSFET ( TO-220/TO-220FP ) ® IRF640 IRF640FP N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF640 IRF640FP s s s s V DSS 200 V 200 V R DS(on) < 0.18 Ω < 0.18 Ω ID 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES STMicroelectronics |
IRF640 Power MOSFET(Vdss=200V/ Rds(on)=0.18ohm/ Id=18A) International Rectifier |
IRF640 200V N-Channel MOSFET IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of e Fairchild Semiconductor |
IRF640 N-Channel Enhancement Mode Power MOS Transistors SEMICONDUCTORS IRF640 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plastic TO220 package. They are intended for use in high speed power switching, low voltage, relay drivers and general purpose switching applications. DC-DC & DC-AC converters for telec Comset Semiconductors |
IRF640 200V, 18A, Power MOSFET IRF640, SiHF640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 70 13 39 Single D FEATURES 200 0.18 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling Vishay |
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