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Datasheet IRF634N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | IRF634N | Power MOSFET(Vdss=250V/ Rds(on)=0.435ohm/ Id=8.0A) PD - 94310
Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description
l l Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing tech |
 International Rectifier |
 |
| 8 | IRF634N | Power MOSFET ( Transistor ) IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
250
RDS(on) (Ω)
VGS = 10 V
Qg (Max.) (nC)
34
Qgs (nC)
6.5
Qgd (nC)
16
Configuration
Single
0.435
I2PAK (TO-262)
TO-220
D
S D G
S D
GG
D2PAK (TO-263)
S N-Channel MOS |
 Vishay |
|
| 7 | IRF634NL | Power MOSFET(Vdss=250V/ Rds(on)=0.435ohm/ Id=8.0A) PD - 94310
Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description
l l Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing tech |
International Rectifier |
|
| 6 | IRF634NL | Power MOSFET ( Transistor ) IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
250
RDS(on) (Ω)
VGS = 10 V
Qg (Max.) (nC)
34
Qgs (nC)
6.5
Qgd (nC)
16
Configuration
Single
0.435
I2PAK (TO-262)
TO-220
D
S D G
S D
GG
D2PAK (TO-263)
S N-Channel MOS |
Vishay |
|
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| Número de pieza | Descripción | Fabricantes | |
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