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Datasheet IRF634FP Equivalent ( PDF )

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1 IRF634FP   N-CHANNEL Power MOSFET

IRF634 IRF634FP N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay™ Power MOSFET General features Type IRF634 IRF634FP VDSS 250V 250V RDS(on) <0.45Ω <0.45Ω ID 8A 8A 33 22 ■ Extremely High dv/dt Capability 11 TO-220 TO-220FP ■ 100% Avalanche Tested t(s)Description cUsin
 STMicroelectronics
STMicroelectronics		 datasheet IRF634FP pdf

IRF63 Datasheet ( Hoja de datos ) - resultados coincidentes

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IRF630A

N-Channel MOSFET Transistor

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage: VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·Fast Switching Speed ·Low Drive Requir
 Inchange Semiconductor
Inchange Semiconductor		 datasheet pdf - Inchange Semiconductor
IRF630

200V/9A POWER MOSFET

200V/9A POWER MOSFET (N-Channel) IRF630/IRFS630 200V/9A Power MOSFET (N-Channel) General Description • IRF630/IRFS630 are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs are designed for low voltage, high speed power switching applications
 TAITRON
TAITRON		 datasheet pdf - TAITRON
IRF630

9A, 200V, N-Channel Power MOSFET

Data Sheet IRF630, RF1S630SM January 2002 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in
Fairchild Semiconductor
Fairchild Semiconductor		 datasheet pdf - Fairchild Semiconductor


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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