IRF630PBF データシート PDFこの部品の機能は「Power Mosfet ( Transistor )」です。 |
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部品番号 |
IRF630PBF Power MOSFET ( Transistor ) Lead-Free PD- 95916 IRF630PbF www.irf.com 1 9/27/04 IRF630PbF 2 www.irf.com IRF630PbF www.irf.com 3 IRF630PbF 4 www.irf.com IRF630PbF www.irf.com 5 IRF630PbF 6 www.irf.com IRF630PbF Pe International Rectifier |
IRF630PBF N-Channel Type Power MOSFET IRF630PBF ® IRF630PBF Pb Free Plating Product Pb 9A,200V Heatsink N-Channel Type Power MOSFET Features ̰ RDS(on) (Max 0.4 ˟ )@VGS=10V ̰ Gate Charge (Typical 44nC) ̰ Improved dv/dt Capability Thinki Semiconductor |
文字列「 IRF630 」「 630PBF 」で始まる検索結果です。 |
部品説明 |
IRF630 200V/9A POWER MOSFET 200V/9A POWER MOSFET (N-Channel) IRF630/IRFS630 200V/9A Power MOSFET (N-Channel) General Description • IRF630/IRFS630 are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs are designed for low voltage, high speed power switching applications TAITRON |
IRF630 N-channel TrenchMOS transistor Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF630, IRF630S FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 9 A g RDS(ON) ≤ 4 NXP Semiconductors |
IRF630 N-CHANNEL MOSFET IRF630 IRF630FP N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay™ II Power MOSFET General features Type IRF630 IRF630FP VDSS 200V 200V RDS(on) <0.40Ω <0.40Ω ■ Extremely high dv/dt capability ■ Very low intrinsic capacitances ■ Gate charge minimized ID STMicroelectronics |
IRF630 9A/ 200V/ 0.400 Ohm/ N-Channel Power MOSFETs IRF630, RF1S630SM Data Sheet June 1999 File Number 1578.2 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified le Intersil Corporation |
IRF630 HEXFET Power MOSFET ( Vdss=200V/ Id=9.0A ) International Rectifier |
IRF630 9A, 200V, N-Channel Power MOSFET Data Sheet IRF630, RF1S630SM January 2002 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in Fairchild Semiconductor |
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