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Datasheet IRF630N Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
8 | IRF630N | Power MOSFET(Vdss=200V/ Rds(on)=0.30ohm/ Id=9.3A) PD - 94005A
IRF630N IRF630NS IRF630NL
Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description
l l
HEXFET® Power MOSFET
D
VDSS = 200V RDS(on) = 0.30Ω
G S
Fifth Genera |
International Rectifier |
|
7 | IRF630N | Trans MOSFET N-CH 200V 9.3A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
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6 | IRF630NL | Power MOSFET(Vdss=200V/ Rds(on)=0.30ohm/ Id=9.3A) PD - 94005A
IRF630N IRF630NS IRF630NL
Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description
l l
HEXFET® Power MOSFET
D
VDSS = 200V RDS(on) = 0.30Ω
G S
Fifth Genera |
International Rectifier |
|
5 | IRF630NLPBF | HEXFET Power MOSFET
PD - 95047
Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description
l l
IRF630NPbF IRF630NSPbF IRF630NLPbF
HEXFET® Power MOSFET
D
VDSS = |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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