IRF614B データシート PDFこの部品の機能は「250v N-channel Mosfet」です。 |
検索結果を表示する |
部品番号 |
IRF614B 250V N-Channel MOSFET IRF614B/IRFS614B November 2001 IRF614B/IRFS614B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary Fairchild Semiconductor |
文字列「 IRF614 」「 614B 」で始まる検索結果です。 |
部品説明 |
IRF614 N-Channel Mosfet Transistor INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements isc Product Specification IRF614 ·DESCRITION ·Designed for high speed applications, such as switching Inchange Semiconductor |
IRF614 2.0A/ 250V/ 2.0 Ohm/ N-Channel Power MOSFET IRF614 January 1998 2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET Description This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdo Intersil Corporation |
IRF614 power mosfet International Rectifier |
IRF614 Power MOSFET ( Transistor ) Power MOSFET IRF614, SiHF614 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 8.2 1.8 4.5 Single 2.0 TO-220AB D S D G G S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rate Vishay |
IRF614A Power MOSFET ( Transistor ) )($785(6 Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,PSURYHGýý*DWHýý&KDUJH Qýýý([WHQGHGýý6DIHýý2SHUDWLQJýý$UHD Qýýý/RZHUýý/HDNDJHýý&XUUHQW Samsung |
IRF614PBF hexfet power mosfet PD - 94849 IRF614PbF • Lead-Free www.irf.com 1 11/25/06 IRF614PbF 2 www.irf.com IRF614PbF www.irf.com 3 IRF614PbF 4 www.irf.com IRF614PbF www.irf.com 5 IRF614PbF 6 www.irf.com IRF614PbF TO-220AB Package Outline 2.87 (.113) 2.62 (.103) 1 International Rectifier |
当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。 |