IRF5804 データシート PDFこの部品の機能は「Power Mosfet(vdss=-40v)」です。 |
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部品番号 |
IRF5804 Power MOSFET(Vdss=-40V) PD - 94333 IRF5804 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS -40V RDS(on) max (mΩ) 198@VGS = -10V 334@V International Rectifier |
文字列「 IRF5804 」「 5804 」で始まる検索結果です。 |
部品説明 |
IRF5804PbF Power MOSFET ( Transistor ) l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low International Rectifier |
1N5804 DOIDE ULTRA FAST RECOVERY RECTIFIER 3A 2DIE New Jersey Semiconductor |
1N5804 DIODE Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IZM) Current, Surge (IFM) at tp = 8.3 ms Max. Power Dissipation (PT) at TC = °C Max. Thermal Resistance (Rth J-A) M DSI |
1N5804 VOIDLESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS 1N5802, 1N5804, 1N5806 Available on commercial versions VOIDLESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS Qualified per MIL-PRF-19500/477 DESCRIPTION This “Ultrafast Recovery” rectifier diode series is military qualified and is ideal for high-reliability ap Microsemi |
1N5804 RECTIFIER DIODE RECTIFIER, up to 150V, 2.5A, 25ns 1N5802 1N5804 1N5806 TEL:805-498-2111 FAX:805-498- 3804 WEB:http://www.semtech.com MECHANICAL G111 Dimensions DIM N A B C D E Millimeters MIN MAX 1.65 2.16 17.8 33.0 3.18 6.35 - 0.80 0.69 0.81 Inches MIN MAX 0.065 0.085 0.70 1.30 0.1 Semtech |
1N5804 GLASS PASSIVATED JUNCTION ULTRA FAST RECTIFIERS Certificate TH97/10561QM Certificate TW00/17276EM 1N5802 - 1N5806 PRV : 50 - 150 Volts Io : 2.5 Amperes GLASS PASSIVATED JUNCTION ULTRA FAST RECTIFIERS DO - 41 FEATURES : * Glass passivated chip * High current capability * High surge current capability * High reliability * Lo EIC |
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