IRF520N データシート PDFこの部品の機能は「Power Mosfet(vdss = 100 V/ Rds(on) = 0.20 Ohm/ Id= 9.7a)」です。 |
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部品番号 |
IRF520N Power MOSFET(Vdss = 100 V/ Rds(on) = 0.20 Ohm/ Id= 9.7A) PD - 91339A IRF520N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V G S RDS(on) = International Rectifier |
文字列「 IRF520 」「 520N 」で始まる検索結果です。 |
部品説明 |
IRF520 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS IRF520 IRF520FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI s s s s s s s V DSS 100 V 100 V R DS( on) < 0.27 Ω < 0.27 Ω ID 10 A 7A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC L STMicroelectronics |
IRF520 N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs Supertex Inc |
IRF520 9.2A/ 100V/ 0.270 Ohm/ N-Channel Power MOSFET IRF520 Data Sheet November 1999 File Number 1574.4 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in Intersil Corporation |
IRF520 N-Channel Power MOSFETs/ 11 A/ 60-100 V Data Sheet January 2002 IRF520 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown aval Fairchild Semiconductor |
IRF520 Trans MOSFET N-CH 100V 9.2A 3-Pin(3+Tab) TO-220AB New Jersey Semiconductor |
IRF520 Power MOSFET ( Transistor ) Power MOSFET IRF520, SiHF520 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 16 4.4 7.7 Single 0.27 TO-220AB D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Vishay |
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