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Datasheet IRF520 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 21 | IRF520 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS IRF520 IRF520FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE IRF520 IRF520FI
s s s s s s s
V DSS 100 V 100 V
R DS( on) < 0.27 Ω < 0.27 Ω
ID 10 A 7A
TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH |
 STMicroelectronics |
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| 20 | IRF520 | N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs |
 Supertex Inc |
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| 19 | IRF520 | 9.2A/ 100V/ 0.270 Ohm/ N-Channel Power MOSFET IRF520
Data Sheet November 1999 File Number 1574.4
9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalan |
 Intersil Corporation |
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| 18 | IRF520 | N-Channel Power MOSFETs/ 11 A/ 60-100 V Data Sheet
January 2002
IRF520
9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operat |
 Fairchild Semiconductor |
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