IRF510G データシート PDFこの部品の機能は「Trans Mosfet N-ch 100v 5.6a 3-pin(3+tab) To-220ab」です。 |
検索結果を表示する |
部品番号 |
IRF510G Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220AB New Jersey Semiconductor |
文字列「 IRF510 」「 510G 」で始まる検索結果です。 |
部品説明 |
IRF510 N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF510 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·DESCRITION ·Designed especially for high voltage,high speed applic Inchange Semiconductor |
IRF510 N-Channel Enhancement-Mode Vertical DMOS Power FETs Supertex Inc |
IRF510 5.6A/ 100V/ 0.540 Ohm/ N-Channel Power MOSFET IRF510 Data Sheet November 1999 File Number 1573.4 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in Intersil Corporation |
IRF510 HEFXFET Power MOSFET (Vdss=100V / Id=5.6A) International Rectifier |
IRF510 N-Channel Power MOSFET / Transistor Data Sheet January 2002 IRF510 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown aval Fairchild Semiconductor |
IRF510 (IRF510 - IRF513) N-Channel Power MOSFETs Semiconductor IRF510, IRF511, IRF512, IRF513 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tes Harris Corporation |
当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。 |