Datasheet IRF4905PBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRF4905PBF	Power MOSFET ( Transistor ) Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistan	International Rectifier

IRF4905 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRF4905	P-Channel MOSFET Transistor INCHANGE Semiconductor isc P-Channel MOSFET Transistor isc Product Specification IRF4905 FEATURES ·Advanced Process Technology ·Ultra Low On-Resistance ·Dynamic dv/dt Rating ·175°C Operating Temperature ·Fast Switching ·P-Channel ·Fully Avalanche Rated DESCRIPTION ·Thi	Inchange Semiconductor
IRF4905	Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A) PD - 9.1280C IRF4905 HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -55V G S RDS(on) = 0.02Ω ID = -74A Fifth Gener	International Rectifier
IRF4905S	Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A) PD - 9.1478A IRF4905S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF4905S) l Low-profile through-hole (IRF4905L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -55V RDS(on) = 0.02Ω G ID =	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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