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Datasheet IRF221 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | IRF221 | N-Channel Power MOSFETs Semiconductor
October 1997
IRF220, IRF221, IRF222, IRF223
4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs
Features
• 4.0A and 5.0A, 150V and 200V • rDS(ON) = 0.8Ω and 1.2Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Charac |
 Harris |
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| 5 | IRF221 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF221
DESCRIPTION ·Drain Current ID=5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 150V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =0.8Ω(Max) ·High Speed Applications
APPLICATIONS ·Switching power supplies
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 Inchange Semiconductor |
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| 4 | IRF221 | N-Channel Power MOSFETs/ 7A/ 150-200V |
 Fairchild Semiconductor |
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| 3 | IRF221 | N-CHANNEL POWER MOSFETS |
 Samsung semiconductor |
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