IRF1404ZGPBF データシート PDFこの部品の機能は「Power Mosfet ( Transistor )」です。 |
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部品番号 |
IRF1404ZGPBF Power MOSFET ( Transistor ) PD - 96236A IRF1404ZGPbF Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Hal International Rectifier |
文字列「 IRF1404 」「 1404ZGPBF 」で始まる検索結果です。 |
部品説明 |
IRF1404 N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF1404 FEATURES ·Drain Current –ID= 162A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.004Ω(Max) ·Fast Switching Description Seventh Ge Inchange Semiconductor |
IRF1404 Power MOSFET ( Transistor ) l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Automotive Qualified (Q101) Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced International Rectifier |
IRF1404L Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A) PD -93853C HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description ® l l IRF1404S IRF1404L D VDSS = 40V G S RDS(on) = 0.004Ω ID = 162A Seventh G International Rectifier |
IRF1404LPbF Power MOSFET ( Transistor ) l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techni International Rectifier |
IRF1404PbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techn International Rectifier |
IRF1404S Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A) PD -93853C HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description ® l l IRF1404S IRF1404L D VDSS = 40V G S RDS(on) = 0.004Ω ID = 162A Seventh G International Rectifier |
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