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Datasheet IRF1010ZS Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRF1010ZS | AUTOMOTIVE MOSFET PD - 94652A
AUTOMOTIVE MOSFET
IRF1010Z IRF1010ZS IRF1010ZL
HEXFET® Power MOSFET
D
Features
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Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
G
VDSS = 55V RDS(on) = 7.5mΩ
S
Description
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 International Rectifier |
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| 1 | IRF1010ZSPbF | Power MOSFET ( Transistor ) PD - 95361A
IRF1010ZPbF
IRF1010ZSPbF
Features
IRF1010ZLPbF
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest processing techniq |
International Rectifier |
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