IRF1010Z データシート PDFこの部品の機能は「Automotive Mosfet」です。 |
検索結果を表示する |
部品番号 |
IRF1010Z AUTOMOTIVE MOSFET PD - 94652A AUTOMOTIVE MOSFET IRF1010Z IRF1010ZS IRF1010ZL HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fas International Rectifier |
文字列「 IRF1010 」「 1010Z 」で始まる検索結果です。 |
部品説明 |
IRF1010 N-Channel Power MOSFET / Transistor SEMICONDUCTOR IRF1010 Series N-Channel Power MOSFET (84A, 60Volts) D D RoHS RoHS Nell High Power Products DESCRIPTION The Nell IRF1010 is a three-terminal silicon device with current conduction capability of 84A, fast switching speed, low on-state resistance, breakdown volta nELL |
IRF1010E Power MOSFET(Vdss=60V/Rds(on)=12mohm/Id=84A PD - 91670 IRF1010E HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS(on) = 12mΩ G S ID = 84A Description Advanced HEXFET® Power International Rectifier |
IRF1010EL Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A) PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated G HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 12mΩ Description Advanced International Rectifier |
IRF1010ELPbF HEXFET Power MOSFET PD - 95444 Advanced Process Technology l Surface Mount (IRF1010ES) l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l IRF1010ESPbF IRF1010ELPbF HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 12 International Rectifier |
IRF1010EPBF Power MOSFET ( Transistor ) PD - 94965A IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G S ID = 84A International Rectifier |
IRF1010ES Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A) PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated G HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 12mΩ Description Advanced International Rectifier |
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