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Datasheet IPT020N10N3 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1IPT020N10N3MOSFET, Transistor

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTM3Power-Transistor,100V IPT020N10N3 DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Extremelylowon-re
Infineon
Infineon
mosfet


IPT Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1IPT004N03LMOSFET, Transistor

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-MOSFET,30V IPT004N03L DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description Features •Optimizedfore-fuseandORingapplication •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avala
Infineon
Infineon
mosfet
2IPT007N06NMOSFET, Transistor

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,60V IPT007N06N DataSheet Rev.2.1 Final PowerManagement&Multimarket 1Description Features •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC
Infineon
Infineon
mosfet
3IPT012N08N5MOSFET, Transistor

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTM5Power-Transistor,80V IPT012N08N5 DataSheet Rev.2.1 Final PowerManagement&Multimarket 1Description Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FO
Infineon
Infineon
mosfet
4IPT015N10N5MOSFET, Transistor

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTM5Power-Transistor,100V IPT015N10N5 DataSheet Rev.2.1 Final PowerManagement&Multimarket 1Description Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(F
Infineon
Infineon
mosfet
5IPT020N10N3MOSFET, Transistor

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTM3Power-Transistor,100V IPT020N10N3 DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Extremelylowon-re
Infineon
Infineon
mosfet
6IPT059N15N3MOSFET, Transistor

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª3Power-Transistor,150V IPT059N15N3 DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSª3Power-Transistor,150V IPT059N15N3 1Description Features •N-channel,normallevel •Excellentgatecharge
Infineon
Infineon
mosfet
7IPT111N20NFDMOSFET, Transistor

IPT111N20NFD MOSFET OptiMOSª3Power-Transistor,200V Features •N-channel,normallevel •FastDiode(FD)withreducedQrr •Optimizedforhardcommutationruggedness •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Qualified
Infineon
Infineon
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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