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IPP64CN10N データシート PDF

この部品の機能は「Power Transistor」です。


検索結果を表示する

部品番号
IPP64CN10N

Power Transistor


IPD64CN10N G IPU64CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating


Infineon Technologies
Infineon Technologies

データシート pdf



文字列「 IPP64CN10 」「 64CN10N 」で始まる検索結果です。

部品説明

23C6410

64M-BITMaskROM(8/16BitOutput)ForSOPandTSOPPackages

MX23C6410 64M-BIT Mask ROM (8/16 Bit Output) For SOP and TSOP Packages FEATURES • Bit organization - 8M x 8 (byte mode) - 4M x 16 (word mode) • Fast access time - Random access: 100ns (max.) • Current - Operating: 70mA - Standby: 100uA (max.) • Supply voltage - 5V±10% �

MacronixInternational
MacronixInternational

 データシート pdf


2N6410

Trans GP BJT NPN 100V 4A 3-Pin(3+Tab) TO-220 Box

New Jersey Semiconductor
New Jersey Semiconductor

 データシート pdf


5962F9764101VEA

Radiation Hardened Ultra High Frequency NPN Transistor Array

HS-6254RH Data Sheet August 1999 File Number 4425.2 Radiation Hardened Ultra High Frequency NPN Transistor Array The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes pro

Intersil Corporation
Intersil Corporation

 データシート pdf


5962F9764101VEC

Radiation Hardened Ultra High Frequency NPN Transistor Array

HS-6254RH Data Sheet August 1999 File Number 4425.2 Radiation Hardened Ultra High Frequency NPN Transistor Array The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes pro

Intersil Corporation
Intersil Corporation

 データシート pdf


5962F9764101VXC

Radiation Hardened Ultra High Frequency NPN Transistor Array

HS-6254RH Data Sheet August 1999 File Number 4425.2 Radiation Hardened Ultra High Frequency NPN Transistor Array The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes pro

Intersil Corporation
Intersil Corporation

 データシート pdf


74476410

WE-GF SMD Wire Wound Inductor

A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Inductance Rated current DC Resistance Self resonant frequency Q-factor 2.52 MHz Test conditions 2.52 MHz ∆T = 20 K @ 20°C L IR RDC fres Q Value 10 150 2.1 36 30 Unit µH mA Ω MHz Tol.

WE
WE

 データシート pdf

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