IPP64CN10N データシート PDFこの部品の機能は「Power Transistor」です。 |
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部品番号 |
IPP64CN10N Power Transistor IPD64CN10N G IPU64CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating Infineon Technologies |
文字列「 IPP64CN10 」「 64CN10N 」で始まる検索結果です。 |
部品説明 |
23C6410 64M-BITMaskROM(8/16BitOutput)ForSOPandTSOPPackages MX23C6410 64M-BIT Mask ROM (8/16 Bit Output) For SOP and TSOP Packages FEATURES • Bit organization - 8M x 8 (byte mode) - 4M x 16 (word mode) • Fast access time - Random access: 100ns (max.) • Current - Operating: 70mA - Standby: 100uA (max.) • Supply voltage - 5V±10% � MacronixInternational |
2N6410 Trans GP BJT NPN 100V 4A 3-Pin(3+Tab) TO-220 Box New Jersey Semiconductor |
5962F9764101VEA Radiation Hardened Ultra High Frequency NPN Transistor Array HS-6254RH Data Sheet August 1999 File Number 4425.2 Radiation Hardened Ultra High Frequency NPN Transistor Array The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes pro Intersil Corporation |
5962F9764101VEC Radiation Hardened Ultra High Frequency NPN Transistor Array HS-6254RH Data Sheet August 1999 File Number 4425.2 Radiation Hardened Ultra High Frequency NPN Transistor Array The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes pro Intersil Corporation |
5962F9764101VXC Radiation Hardened Ultra High Frequency NPN Transistor Array HS-6254RH Data Sheet August 1999 File Number 4425.2 Radiation Hardened Ultra High Frequency NPN Transistor Array The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes pro Intersil Corporation |
74476410 WE-GF SMD Wire Wound Inductor A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Inductance Rated current DC Resistance Self resonant frequency Q-factor 2.52 MHz Test conditions 2.52 MHz ∆T = 20 K @ 20°C L IR RDC fres Q Value 10 150 2.1 36 30 Unit µH mA Ω MHz Tol. WE |
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