IPN50R3K0CE データシート PDFこの部品の機能は「Mosfet ( Transistor )」です。 |
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部品番号 |
IPN50R3K0CE MOSFET ( Transistor ) IPN50R3K0CE MOSFET 500VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredby Infineon |
文字列「 IPN50R3K0 」「 50R3K0CE 」で始まる検索結果です。 |
部品説明 |
0895030 Fuses Cartridge Fuses Low Profile JCASE® Fuses Rated 58V Specifications Voltage Rating: Interrupting Rating: Operating Temperature Range: Insertion Force: Extraction Force: Packaging: 58 VDC 1000A @ 58 VDC -40˚C to + 125˚C 53N Max. (12 lb.) 9N Min (2 lb.) Series Littelfuse |
1N5030 Diode Zener Single 30V 5% 3W 2-Pin Case A New Jersey Semiconductor |
1N5030A (1N5008A - 1N5042A) DIODE Free Datasheet http:/// New Jersey Semi-Conductor |
1N5030A Diode Zener Single 30V 5% 3W 2-Pin Case A New Jersey Semiconductor |
2SB035030MLJY 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS 2SB035030MLJY 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB035030MLJY is a schottky barrier diode chips Lb La fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; Hi Silan Microelectronics |
2SC5030 NPN EPITAXIAL TYPE (STOROBE FLASH/ MUDIUM POWER AMPLIFIER APPLICATIONS) 2SC5030 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5030 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • • • High DC current gain : hFE (1) = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (min) (VCE = 2 V, IC = 4 A) Low saturation volt Toshiba Semiconductor |
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