IPI26CN10NG データシート PDFこの部品の機能は「Power-transistor」です。 |
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部品番号 |
IPI26CN10NG Power-Transistor www.Datasheet.jp IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FO Infineon Technologies |
文字列「 IPI26CN10 」「 26CN10NG 」で始まる検索結果です。 |
部品説明 |
1N2610 GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor |
1N2610A GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor |
26100 Bobbin Wound Surface Mount Inductors 2600 SERIES Bobbin Wound Surface Mount Inductors FEATURES s Bobbin Format s Up to 4.6A IDC s 3.3µH to 680µH s Optional Integral EMI Shield s Low DC Resistance s Surface Mounting s Compact Size s Tape and Reel Packaging DESCRIPTION The 2600 series is a range of bobbin wound sur C&DTechnologies |
26101 Bobbin Wound Surface Mount Inductors 2600 SERIES Bobbin Wound Surface Mount Inductors FEATURES s Bobbin Format s Up to 4.6A IDC s 3.3µH to 680µH s Optional Integral EMI Shield s Low DC Resistance s Surface Mounting s Compact Size s Tape and Reel Packaging DESCRIPTION The 2600 series is a range of bobbin wound sur C&DTechnologies |
2SC2610 Silicon NPN Triple Diffused 2SC2610 Silicon NPN Triple Diffused Application • High voltage amplifier • TV Video output Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2610 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base vol Hitachi Semiconductor |
2SC2610 Silicon NPN Triple Diffused 2SC2610 Silicon NPN Triple Diffused REJ03G0700-0200 (Previous ADE-208-1068) Rev.2.00 Aug.10.2005 Application • High voltage amplifier • TV Video output Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maxi Renesas |
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