Datasheet IPB180N10S4-02 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IPB180N10S4-02	Power-Transistor OptiMOSTM-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB180N10S4-02 Product Summary VDS RDS(on) ID 100 V 2.5 mΩ 180 A PG-TO263-7-3	Infineon

IPB180N10S4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IPB180N10S4-02	Power-Transistor OptiMOSTM-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB180N10S4-02 Product Summary VDS RDS(on) ID 100 V 2.5 mΩ	Infineon
IPB180N10S4-03	Power-Transistor OptiMOSTM-T2 Power-Transistor Features • N-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB180N10S4-03 Product Summary VDS RDS(on) ID	Infineon

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